IRFB4110PBF high current MOS field effect tube 180A100V
| PartNo | IRFB4110PBF |
| Categories | - |
| Series | HEXFET® |
| Packaging | Bulk |
| Part Status | - |
| FET Type | N-Channel |
| Technology | - |
| Current- | 30A (Tc) |
| Drive Voltage (Max | - |
| Vgs(th) (Max) @ Id4V | - |
| Gate Charge (Qg) | - |
| Input Capacitance | - |
| Vgs (Max) | - |
| Power Dissipation | 370W (Tc) |
| Rds On (Max) @ Id, | 4.5 mOhm @ 75A, 10V |
| Operating | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220AB |
| Supplier Device | TO-220-3 |
| Standard Package | 50 |
| Other Names | 64-0076PBF |
IRFB4110PBF high current MOS field effect tube 180A100V
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